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Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications
Vadalà, Valeria; Raffo, A.; Bosi, Gianni; Giofrè, Rocco; Vannini, Giorgio     dettagli >>

Atto di Convegno (Proceedings)
Institute of Electrical and Electronics Engineers Inc., 2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications, TELSIKS 2021 - Proceedings
pp: 63-69, Anno: 2021

Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements
Bosi, G.; Vadala', V.; Giofre, R.; Raffo, A.; Vannini, G.     dettagli >>

Atto di Convegno (Proceedings)
Institute of Electrical and Electronics Engineers Inc., 2021 34th General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2021
pp: 01-03, Anno: 2021

An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation
Jarndal, A.; Crupi, G.; Raffo, A.; Vadala', V.; Vannini, G.     dettagli >>

Contributo in rivista (Pubblicazione in Rivista)
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Vol. 9, No. 1, pp: 378-386, Anno: 2021

Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design
Bosi, Gianni; Raffo, Antonio; Vadalà, Valeria; Vannini, Giorgio; Avolio, Gustavo; Marchetti, Mauro; Giofre', Rocco; Colantonio, Paolo; Limiti, Ernesto     dettagli >>

Atto di Convegno (Proceedings)
Institute of Electrical and Electronics Engineers Inc., 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) - Proceedings
pp: 9160151-1-9160151-3, Anno: 2020

Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation
Vadalà, Valeria; Vannini, G.     dettagli >>

Atto di Convegno (Proceedings)
Institute of Electrical and Electronics Engineers Inc., 2020 33rd General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2020
pp: 9232254-1-9232254-3, Anno: 2020

A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations
Raffo, A.; Vadala, V.; Yamamoto, H.; Kikuchi, K.; Bosi, G.; Ui, N.; Inoue, K.; Vannini, G.     dettagli >>

Contributo in rivista (Pubblicazione in Rivista)
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Vol. 68, No. 7, pp: 3100-3110, Anno: 2020

Scalability of Multifinger HEMT Performance
Crupi, G.; Raffo, A.; Vadala, Valeria; Vannini, G.; Schreurs, D. M. M. -P.; Caddemi, A.     dettagli >>

Contributo in rivista (Pubblicazione in Rivista)
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Vol. 30, No. 9, pp: 869-872, Anno: 2020

GaN HEMT Model with Enhanced Accuracy under Back-off Operation
Vadala', Valeria; Raffo, Antonio; Kikuchi, Ken; Yamamoto, Hiroshi; Bosi, Gianni; Inoue, Kazutaka; Ui, Norihiko; Vannini, Giorgio     dettagli >>

Atto di Convegno (Proceedings)
Institute of Electrical and Electronics Engineers Inc., 2019 14th European Microwave Integrated Circuits Conference (EuMIC)
pp: 37-40, Anno: 2019

GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study
Avolio, G.; Raffo, A.; Marchetti, M.; Bosi, G.; Vadalà, V.; Vannini, G.     dettagli >>

Atto di Convegno (Proceedings)
Institute of Electrical and Electronics Engineers Inc., 2019 14th European Microwave Integrated Circuits Conference (EuMIC)
pp: 80-83, Anno: 2019

Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs
Marinkovic, Z.; Crupi, G.; Vadala, V.; Raffo, A.; Caddemi, A.; Markovic, V.; Schreurs, D. M. M. -P.     dettagli >>

Atto di Convegno (Proceedings)
Institute of Electrical and Electronics Engineers Inc., 2019 14th International Conference on Advanced Technologies, Systems and Services in Telecommunications, TELSIKS 2019 - Proceedings
pp: 33-36, Anno: 2019

A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
Luo, Peng; Schnieder, Frank; Bengtsson, Olof; Vadalà, Valeria; Raffo, Antonio; Heinrich, Wolfgang; Rudolph, Matthias     dettagli >>

Contributo in rivista (Pubblicazione in Rivista)
INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES
Vol. 11, No. 2, pp: 121-129, Anno: 2019

High-periphery GaN HEMT modeling up to 65 GHz and 200 °C
Crupi, Giovanni; Raffo, Antonio; Vadalà, Valeria; Vannini, Giorgio; Caddemi, Alina     dettagli >>

Contributo in rivista (Pubblicazione in Rivista)
SOLID-STATE ELECTRONICS
Vol. 152, No. 1, pp: 11-16, Anno: 2018

Nonlinear-embedding design methodology oriented to LDMOS power amplifiers
Bosi, Gianni; Raffo, Antonio; Trevisan, Francesco; Vadala, Valeria; Crupi, Giovanni; Vannini, Giorgio     dettagli >>

Contributo in rivista (Pubblicazione in Rivista)
IEEE TRANSACTIONS ON POWER ELECTRONICS
Vol. 33, No. 10, pp: 8764-8774, Anno: 2018

A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology
Crupi, Giovanni; Raffo, Antonio; Vadalà, Valeria; Vannini, Giorgio; Caddemi, Alina     dettagli >>

Contributo in rivista (Pubblicazione in Rivista)
ELECTRONICS
Vol. 7, No. 12, pp: 353-1-353-11, Anno: 2018

Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers
Yamamoto, Hiroshi; Kikuchi, Ken; Ui, Norihiko; Inoue, Kazutaka; Vadala, Valeria; Bosi, Gianni; Raffo, Antonio; Vannini, Giorgio     dettagli >>

Atto di Convegno (Proceedings)
Institute of Electrical and Electronics Engineers Inc., 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
pp: 44-47, Anno: 2018

Current-gain in FETs beyond cut-off frequency
Crupi, Giovanni; Raffo, Antonio; Vadalà, Valeria; Vannini, Giorgio; Caddemi, Alina     dettagli >>

Contributo in rivista (Pubblicazione in Rivista)
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Vol. 60, No. 12, pp: 3023-3026, Anno: 2018

Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs
Crupi, Giovanni; Raffo, Antonio; Vadala, Valeria; Avolio, Gustavo; Schreurs, Dominique M. M. -P.; Vannini, Giorgio; Caddemi, Alina     dettagli >>

Contributo in rivista (Pubblicazione in Rivista)
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Vol. 28, No. 4, pp: 326-328, Anno: 2018

Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements
Kikuchi, Ken; Yamamoto, Hiroshi; Ui, Norihiko; Inoue, Kazutaka; Vadala', Valeria; Bosi, Gianni; Raffo, Antonio; Vannini, Giorgio     dettagli >>

Atto di Convegno (Proceedings)
Institute of Electrical and Electronics Engineers Inc., International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2018 - Proceedings
pp: 8430002-1-8430002-3, Anno: 2018

Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems
Raffo, Antonio; Avolio, Gustavo; Vadala', Valeria; Bosi, Gianni; Vannini, Giorgio; Schreurs, Dominique     dettagli >>

Contributo in rivista (Pubblicazione in Rivista)
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Vol. 28, No. 11, pp: 1035-1037, Anno: 2018

75-VDC GaN technology investigation from a degradation perspective
Trevisan, Francesco; Raffo, Antonio; Bosi, Gianni; Vadala', Valeria; Vannini, Giorgio; Formicone, Gabriele; Burger, Jeff; Custer, James     dettagli >>

Atto di Convegno (Proceedings)
Institute of Electrical and Electronics Engineers Inc., Proceedings of the 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2017
pp: 1-4, Anno: 2017

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